MITSUBISHI ELECTRIC News Releases Mitsubishi Electric Develops 14GHz Power Amplifier with World's Highest Output Power for Satellite Communications
Photo Release -- Northrop Grumman Develops New Gallium Arsenide E-Band High- Power Monolithic Microwave Integrated Circuits | Northrop Grumman
A 1‐W Ka‐band power amplifier using 0.15‐μm InGaAs/GaAs E‐mode pHEMT technology - Lee - 2019 - Microwave and Optical Technology Letters - Wiley Online Library
A 4W GaAs Power Amplifier MMIC for Ku-band Satellite
Mimix Launches 26-31 GHz GaAs MMIC Power Amplifier Optimized For Linear Operation
Electronics | Free Full-Text | High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78
Figure 3 from A High-Power Low-Distortion GaAs HBT Power Amplifier with 3.3 V Supply for 5-6 GHz Broadband Wireless Applications | Semantic Scholar
Architecture of the Ku-band 4-W GaAs MMIC power amplifier. | Download Scientific Diagram
RF front-ends for mobile apps includes GaAs power amps
ADPA7009-2 GaAs pHEMT MMIC Power Amplifier - ADI | Mouser
The AC coupled schematics of the GaAs HBT power amplifier [1] | Download Scientific Diagram
GaAs 150 GHz power amplifier targets 6G and 5G Advanced ...
GaN Breaks Barriers—RF Power Amplifiers Go Wide and High - Industry Articles
GaN vs. GaAs for RF Amplifiers and Power Conversion | NWES Blog
GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits
Mimix Introduces 8.5 To 11 GHz GaAs MMIC High Power Amplifier
ADPA7006 GaAs pHEMT MMIC Power Amplifier - ADI | Mouser
GaN vs. GaAs for RF Amplifiers and Power Conversion | NWES Blog